DocumentCode
402246
Title
Refined wide band modelling and design of CMOS-compatible spiral inductors with BCB dielectric layer
Author
Tikhov, Yuri ; Shim, Dongha ; Nam, K.W. ; Song, Insang
Author_Institution
Samsung Adv. Inst. of Technol., Suwon, South Korea
Volume
1
fYear
2003
fDate
7-9 Oct. 2003
Firstpage
57
Abstract
This paper discloses a new measurement-based model of on-chip spiral inductor with BCB dielectric layer. The parameters of the refined equivalent circuit are extracted through an optimisation with respect to specially formulated objective functions. Accurate modelling of fabricated high-Q inductors validates the proposed approach over a wide band from 100 MHz to 20 GHz.
Keywords
CMOS integrated circuits; Q-factor; equivalent circuits; polymer films; thin film inductors; 100 MHz to 20 GHz; BCB dielectric layer; CMOS-compatible spiral inductors; benzocyclobutene; high-Q inductors; on-chip spiral inductor; Dielectric measurements; Dielectric substrates; Equivalent circuits; Fabrication; Frequency; Inductors; Integrated circuit modeling; Silicon; Spirals; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003. 33rd European
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMC.2003.1262217
Filename
1262217
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