Title :
10 W high efficiency 14 V HBT power amplifier for space applications
Author :
Gallou, N. Le ; Villemazet, J.F. ; Cogo, B. ; Cazaux, J.L. ; Mallet, A. ; Lapierre, L.
Author_Institution :
Alcatel Espace, Toulouse, France
Abstract :
This paper presents the first development of a space-borne power amplifier using the recently developed high breakdown, high Power HBT HB20S process of UMS. The inverse F class hybrid power amplifier has been designed using intensive simulation methods developed at Alcatel Space for MMICs, allowing very high performances to be reached without manual tuning. The results of 10 W/PAE>65% obtained with a single chip at 1.5 GHz demonstrate the capability of the process to handle very high power densities and efficiencies.
Keywords :
MMIC power amplifiers; UHF bipolar transistors; UHF integrated circuits; UHF power amplifiers; bipolar integrated circuits; heterojunction bipolar transistors; space vehicle electronics; 1.5 GHz; 10 W; 65 percent; Alcatel Space MMIC simulation methods; HBT power amplifier; PAE; UMS high breakdown high power HBT HB20Sprocess; inverse F class hybrid power amplifier design; power density; power efficiency; space applications; space-borne power amplifier; Circuit simulation; Electric breakdown; Fingers; Heterojunction bipolar transistors; High power amplifiers; Impedance; Libraries; Space technology; Temperature; Voltage;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262272
