Title :
An 1 GHz class E LDMOS power amplifier
Author :
Ådahl, Andreas ; Zirath, Herbert
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit is implemented with lumped and distributed elements. An output power of 6.2 W at 69% drain efficiency with a gain of 11 dB was obtained at 1 GHz. Both simulations and measurements of the amplifier are presented within this paper. This is to our knowledge the highest efficiency and output power reported for a class E amplifier at 1 GHz.
Keywords :
MOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; 1 GHz; 11 dB; 6.2 W; 69 percent; Class E LDMOS power amplifier; LDMOS transistor switching element; distributed elements; drain efficiency; harmonic balance simulator; lumped elements; variable capacitors; Capacitors; Circuit simulation; Energy consumption; High power amplifiers; Microwave amplifiers; Microwave transistors; Power amplifiers; Power generation; Switches; Voltage;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262275
