Title :
A 23 GHz active mixer with integrated diode linearizer in SiGe BiCMOS technology
Author :
Bao, Mingquan ; Yinggang Li ; Cathelin, Andreia
Author_Institution :
Ericsson Res., Ericsson AB, Molndal, Sweden
Abstract :
Active mixers operating at 23 GHz are designed and fabricated in SiGe technology. An integrated diode linearizer is used to improve the linearity of the mixer. Measurement and simulation show excellent agreement. Typically, 10 dB double-sideband noise figure, 10 dBm IIP3 and 2 dB conversion gain are measured, featuring low noise and high linearity in a same design.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC mixers; active networks; integrated circuit noise; 23 GHz; BiCMOS technology; SiGe; active mixer; double balanced Gilbert topology; double-sideband noise figure; high linearity; integrated diode linearizer; low noise; mixer linearity; monolithic mixers; performance optimization; BiCMOS integrated circuits; Circuit topology; Diodes; Germanium silicon alloys; Impedance; Linearity; Mixers; Noise figure; Radio frequency; Silicon germanium;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262301
