Contactless microwave Hall effect transport in ZnSe

Author

Prati, Enrico ; Faralli, Stefano ; Annino, Giuseppe ; Martinelli, Massimo

Author_Institution

CNR, Pisa, Italy

Volume

1

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

479

Abstract

Quantum well 2DEG recent effects such as Bose-gas of excitons, quantum Hall related zero resistance and ultra low doped gases in III-V require high quality samples. The same physics could be replicated in II-VI compounds, but the control of the quality by transport characterization leads to difficulties related to the ohmic contacts. Measurements of the mobility of n-ZnSe samples have been performed by a contactless method at 20GHz by using a bimodal cavity resonator and a two-channel vector network analyzer. Values obtained for measured samples match with dc Hall measurements, towards an accurate determination of the mobility in quantum well II-VI based heterostructures, where the 2DEG lies.

Keywords

Hall mobility; II-VI semiconductors; microwave reflectometry; semiconductor quantum wells; two-dimensional electron gas; zinc compounds; 20 GHz; DC Hall measurements; Hall mobility; ZnSe; bimodal cavity resonator; contactless microwave Hall effect transport; microwave frequency; quantum well 2DEG; two-channel vector network analyzer; Cavity resonators; Electrical resistance measurement; Excitons; Gases; Hall effect; III-V semiconductor materials; Ohmic contacts; Performance evaluation; Physics; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262329

Filename

1262329