DocumentCode :
402319
Title :
Contactless microwave Hall effect transport in ZnSe
Author :
Prati, Enrico ; Faralli, Stefano ; Annino, Giuseppe ; Martinelli, Massimo
Author_Institution :
CNR, Pisa, Italy
Volume :
1
fYear :
2003
fDate :
7-9 Oct. 2003
Firstpage :
479
Abstract :
Quantum well 2DEG recent effects such as Bose-gas of excitons, quantum Hall related zero resistance and ultra low doped gases in III-V require high quality samples. The same physics could be replicated in II-VI compounds, but the control of the quality by transport characterization leads to difficulties related to the ohmic contacts. Measurements of the mobility of n-ZnSe samples have been performed by a contactless method at 20GHz by using a bimodal cavity resonator and a two-channel vector network analyzer. Values obtained for measured samples match with dc Hall measurements, towards an accurate determination of the mobility in quantum well II-VI based heterostructures, where the 2DEG lies.
Keywords :
Hall mobility; II-VI semiconductors; microwave reflectometry; semiconductor quantum wells; two-dimensional electron gas; zinc compounds; 20 GHz; DC Hall measurements; Hall mobility; ZnSe; bimodal cavity resonator; contactless microwave Hall effect transport; microwave frequency; quantum well 2DEG; two-channel vector network analyzer; Cavity resonators; Electrical resistance measurement; Excitons; Gases; Hall effect; III-V semiconductor materials; Ohmic contacts; Performance evaluation; Physics; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
Type :
conf
DOI :
10.1109/EUMC.2003.1262329
Filename :
1262329
Link To Document :
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