An integrated ASV frequency tripler for millimeter-wave applications

Author

Krach, Markus ; Freyer, Jürgen ; Claassen, Manfred

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany

Volume

3

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

1279

Abstract

The paper describes the technological realisation and experimental verification of a frequency tripler for upper mm-waves. Two anti-serial Schottky diodes are used as non-linear varactor (ASV). The single GaAlAs/GaAs devices with non-uniform doping profile optimised for the desired frequency are quasi-monolithically integrated into a microstrip circuit on quartz substrate. This concept combines the advantages of the low loss properties of the applied quartz substrate with the high reproducibility of the monolithic integration. Experimental results show an output power of 15 mW at 228 GHZ corresponding to a flange to flange conversion efficiency of 22%.

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; doping profiles; frequency multipliers; gallium arsenide; microstrip circuits; millimetre wave devices; monolithic integrated circuits; varactors; 15 mW; 228 GHz; GaAlAs-GaAs; GaAlAs-GaAs devices; SiO₂; antiserial Schottky diodes; frequency tripler; microstrip circuit; millimeter-wave application; monolithic integration; nonlinear varactor; nonuniform doping profile; quartz substrate; quasimonolithically integrated circuit; Doping profiles; Flanges; Frequency; Gallium arsenide; Integrated circuit technology; Millimeter wave integrated circuits; Millimeter wave technology; Paper technology; Schottky diodes; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262891

Filename

1262891