Title :
An integrated ASV frequency tripler for millimeter-wave applications
Author :
Krach, Markus ; Freyer, Jürgen ; Claassen, Manfred
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
The paper describes the technological realisation and experimental verification of a frequency tripler for upper mm-waves. Two anti-serial Schottky diodes are used as non-linear varactor (ASV). The single GaAlAs/GaAs devices with non-uniform doping profile optimised for the desired frequency are quasi-monolithically integrated into a microstrip circuit on quartz substrate. This concept combines the advantages of the low loss properties of the applied quartz substrate with the high reproducibility of the monolithic integration. Experimental results show an output power of 15 mW at 228 GHZ corresponding to a flange to flange conversion efficiency of 22%.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; doping profiles; frequency multipliers; gallium arsenide; microstrip circuits; millimetre wave devices; monolithic integrated circuits; varactors; 15 mW; 228 GHz; GaAlAs-GaAs; GaAlAs-GaAs devices; SiO2; antiserial Schottky diodes; frequency tripler; microstrip circuit; millimeter-wave application; monolithic integration; nonlinear varactor; nonuniform doping profile; quartz substrate; quasimonolithically integrated circuit; Doping profiles; Flanges; Frequency; Gallium arsenide; Integrated circuit technology; Millimeter wave integrated circuits; Millimeter wave technology; Paper technology; Schottky diodes; Varactors;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262891
