Oxidation effect on the loss characteristics of CPWs implemented on low resistivity substrate with thick Oxidized Porous Silicon (OPS) layer

Author

Ha, Man-Lyun ; Shin, Seong-Ho ; Kim, Moon-Jung ; Ko, Ju-Hyun ; Kwon, Young-Se

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea

Volume

3

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

1311

Abstract

Using the general MMIC fabrication process, Coplanar waveguides were implemented on Oxidized Porous Silicon, which were oxidized at several temperature. The effect of oxidation temperature on the loss of CPWs was presented and the loss was decreased with increasing oxidation temperature. These characteristics result from the transformation rate of porous silicon to the thick oxide layer. When the signal line width and spacing were 40 μm and 5 μm, respectively, the insertion loss was about 0.25 dB/mm at 18 GHz, which was oxidized at 1060°C with wet O₂.

Keywords

coplanar waveguides; gold; oxidation; titanium; 1060 degC; 18 GHz; 40 micron; 5 micron; CPW; MMIC fabrication; Si; Ti-Au; oxidation effect; oxidized porous silicon layer; signal line width; wet oxygen; Conductivity; Coplanar waveguides; Inductors; Moisture; Oxidation; Performance loss; Radio frequency; Radiofrequency integrated circuits; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262899

Filename

1262899