Oxidation effect on the loss characteristics of CPWs implemented on low resistivity substrate with thick Oxidized Porous Silicon (OPS) layer

Using the general MMIC fabrication process, Coplanar waveguides were implemented on Oxidized Porous Silicon, which were oxidized at several temperature. The effect of oxidation temperature on the loss of CPWs was presented and the loss was decreased with increasing oxidation temperature. These characteristics result from the transformation rate of porous silicon to the thick oxide layer. When the signal line width and spacing were 40 μm and 5 μm, respectively, the insertion loss was about 0.25 dB/mm at 18 GHz, which was oxidized at 1060°C with wet O₂.