Title :
A 48 GHz fully integrated differential VCO in InP DHBT technology
Author :
Withitsoonthorn, S. ; Blayac, S. ; Riet, M. ; Berdaguer, P. ; Gonzalez, C.
Author_Institution :
Alcatel R&I, France
Abstract :
We describe the development of a 48 GHz fully integrated differential VCO, using InP/InGaAs double heterojunction bipolar transistors (DHBTs), for 40 Gbit/s optical communication systems. This VCO is based on a balanced Colpitts-type topology where a coplanar transmission line is used as the inductive resonator element. The oscillation frequency is tuneable by varying the base-collector junction capacitance of DHBTs without using any external varactors. The VCO exhibits 46.4-49.5 GHz (6.5%) tuning range over a tuning voltage range of 1 V. The circuit provides a non-corrected single-ended output power between -10.5 and 13.5 dBm while the phase noise varies between -75 and -80 dBc/Hz at 1 MHz offset.
Keywords :
III-V semiconductors; circuit tuning; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit measurement; integrated circuit noise; millimetre wave oscillators; optical communication equipment; phase noise; radio equipment; voltage-controlled oscillators; 1 MHz; 1 V; 40 Gbits/s; 46.4 to 49.5 GHz; 48 GHz; Colpitts-type topology; InGaAs; InP; InP DHBT technology; base-collector junction capacitance; coplanar transmission line; inductive resonator; integrated differential VCO; optical communication systems; oscillation frequency; phase noise; single-ended output power; tuning voltage range; varactors; Circuit optimization; Circuit topology; Coplanar transmission lines; DH-HEMTs; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Optical resonators; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262955
