DocumentCode
402439
Title
A 1.8 GHz fully integrated low voltage LC VCO in silicon on sapphire CMOS
Author
Bhatia, Rahul ; Jalan, Umesh ; Chakraborty, Sudipto ; Yoon, Sang-Woong ; Nuttinck, Sebastien ; Pinel, Stephane ; Laskar, Joy
Author_Institution
Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
Volume
2
fYear
2003
fDate
7-9 Oct. 2003
Firstpage
579
Abstract
This paper presents the design, fabrication and measurement of a low voltage VCO operating at 1.8 GHz and fabricated in 0.5μm silicon on sapphire CMOS (SOS-CMOS) process. The VCO operates with supply voltage as low as 1V. The tuning range was measured to be 14% and the measured phase noise was -117.5 dBc/Hz at an offset frequency of 1 MHz from the 1.77 GHz carrier. The VCO and the buffers consume 14.7 mW power from a 1.5V supply.
Keywords
CMOS integrated circuits; integrated circuit design; sapphire; silicon-on-insulator; voltage-controlled oscillators; 0.5 micron; 1.5 V; 1.77 GHz; 1.8 GHz; 14.7 mW; SOS CMOS; buffers; integrated low voltage LC VCO; offset frequency; phase noise; silicon on sapphire; tuning range; voltage controlled oscillator; CMOS process; Fabrication; Frequency measurement; Low voltage; Noise measurement; Phase measurement; Phase noise; Silicon; Tuning; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003. 33rd European
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMC.2003.1262957
Filename
1262957
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