Gate-Induced Source Tunneling FET (GISTFET)

We propose a device, the gate-induced source tunneling FET (GISTFET), that uses two gate work functions to modulate lateral tunneling. The performance of the device is largely independent of the details of the chemical doping profile, potentially freeing device design from issues related to solid solubility, junction abruptness, and dopant variability. We demonstrate the advantages of the device over conventional TFETs using ballistic quantum transport simulations and discuss the possible role of scattering. The proposed device can be used to make all types of tunneling devices, but is particularly important for enabling steep swing, high current p-type transistors.