Amorphous GaN: Optoelectronic properties and device potential

Author

Trodahl, H.J. ; Ruck, B.J. ; Koo, A. ; Lanke, U.D. ; Bittar, A.

Author_Institution

Sch. of Chem. & Phys. Sci., Victoria Univ. of Wellington, New Zealand

Volume

1

fYear

2003

fDate

29 June-3 July 2003

Firstpage

198

Abstract

This paper describes the preparation of an amorphous form of hetero-polar tetrahedrally bonded GaN by ion-assisted deposition. The structure, including composition and bonding configurations, has been subjected to thorough investigation to establish the optimum deposition conditions. The optoelectronic properties of the best films have been measured to evaluate their potential in UV-blue detectors and/or emitters. Currently the best films have shown clear photoconductivity, with sensitivity peaking in the UV, but no useful luminescence has yet been found.

Keywords

III-V semiconductors; amorphous semiconductors; gallium compounds; ion beam assisted deposition; photoconductivity; photoluminescence; semiconductor growth; semiconductor thin films; wide band gap semiconductors; GaN; UV-blue detectors; amorphous GaN; bonding configurations; composition; emitters; films; hetero-polar tetrahedrally bonded GaN; ion-assisted deposition; luminescence; optimum deposition conditions; optoelectronic properties; photoconductivity; preparation; sensitivity; structure; Amorphous materials; Bonding; Chemicals; Composite materials; Crystalline materials; Crystallization; Detectors; Gallium nitride; Optical films; Photoconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on

Print_ISBN

0-7803-7816-4

Type

conf

DOI

10.1109/ICTON.2003.1264615

Filename

1264615