DocumentCode :
404138
Title :
Improved crystallization temperature and interfacial properties of HfO2 gate dielectrics by adding Ta2O5 with TaN metal gate
Author :
Yu, Xiongfei ; Zhu, Chunxiang ; Zhang, Qingchun ; Wu, Nan ; Hu, Hang ; Li, M.F. ; Chin, Albert ; Chan, D.S.H. ; Wang, W.D. ; Kwong, Dim-Lee
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
62
Lastpage :
63
Abstract :
This paper presents high-k value Ta2O5 incorporated into the HfO2 film to improved crystallization temperature and interfacial properties. Here we reported the (HfO2)0.57(Ta2O5)0.43 MOSFET with TaN metal gate.
Keywords :
MOSFET; crystallisation; dielectric devices; dielectric materials; dielectric thin films; hafnium compounds; leakage currents; rapid thermal annealing; tantalum compounds; (100)Si substrate; (HfO2)0.57(Ta2O5)0.43TaN; HfO2 film; HfO2 gate dielectrics; MOS-C device; NMOSFET device; Si; TaN metal gate; crystallization temperature; high-k value Ta2O5 incorporation; interfacial properties; Amorphous materials; Annealing; Atomic layer deposition; Crystallization; Dielectric substrates; Hafnium oxide; Leakage current; MOSFET circuits; Surface cleaning; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1271996
Filename :
1271996
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=404138
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