Title :
Impact of metal gate work function on gate leakage of MOSFETs
Author :
Hou, Y.T. ; Li, M.F. ; Low, Tony ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
A systematic study of tunneling leakage current in metal gate MOFETs is carried out and the physical model used were corroborated by experiments. Effects of metal gate work function on tunnelling characteristics and the criterion for choosing suitable metal gate results in significant reduction of gate-SDE tunnelling. As a result, SOI FETs exhibit much lower off-state leakage than the bulk ones, particularly for high-K dielectric, indicating their superior scalability in terms of leakage currents.
Keywords :
MOSFET; dielectric materials; elemental semiconductors; leakage currents; semiconductor device models; silicon; silicon-on-insulator; tunnelling; work function; SOI FET; Si; dielectric materials; gate leakage; metal gate MOFET; metal gate work function; physical model; tunneling leakage current; Charge carrier processes; Electrodes; Electrons; FETs; Gate leakage; High-K gate dielectrics; Leakage current; MOSFETs; Semiconductor device modeling; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272039
