Modeling and simulation of high-bandwidth Si-based MOS/SOI photodetectors

Author

Liang, C.-Y. ; Hsu, B.-C. ; Lin, CA ; Chang, S.T. ; Liu, C.W.

Author_Institution

Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

230

Lastpage

231

Abstract

A novel MOS photodetector structure is proposed to eliminate the diffusion current by taking advantage of SOI technology. The thick buried oxide stops the diffusion current from substrate and the thin absorption layer makes sure that the device is fully depleted during operation. The absorption region and ground electrode are separated by oxide and connected by buffer layer. The grid structure of Al gate electrode allows the light directly exposures on the absorption region. The device simulation is carried out by commercial software. From the result the SOI-MOS PD can have high bandwidth (22 GHz) and are fully compatible with ULSI technology.

Keywords

MIS devices; adsorbed layers; elemental semiconductors; photodetectors; semiconductor device models; silicon; silicon-on-insulator; tunnel diodes; 22 GHz; Al gate electrode; Si; Si-based MOS/SOI photodetectors simulation; buffer layer; device simulation; diffusion current; ground electrode; thick buried oxide; thin absorption layer; ultra large scale integration technology; Absorption; Artificial intelligence; Bandwidth; Buffer layers; Doping; Frequency; Optical buffering; Photodetectors; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272074

Filename

1272074