DocumentCode
404149
Title
Analytical threshold voltage model for design and evaluation of tri-gate MOSFETs
Author
Zeng, C. ; Barlage, D.W.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
232
Lastpage
233
Abstract
A framework for assessing fundamental device properties of tri-gate device is presented. The dynamics of the threshold voltage calculation is evaluated for the tri-gate architecture of device. Limited comparison to double gate device is also presented.
Keywords
MOSFET; semiconductor device models; analytical threshold voltage model; double gate device; tri-gate MOSFET design; tri-gate MOSFET evaluation; tri-gate device; Analytical models; Data analysis; Density measurement; Insulation; MOSFETs; Manufacturing processes; Poisson equations; Silicon; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272075
Filename
1272075
Link To Document