DocumentCode
404151
Title
Nonparabolicity and negative differential conductance in tunnelling from metal into 2D channel
Author
Feiginov, Michael
Author_Institution
Technische Univ. Darmstadt, Germany
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
240
Lastpage
241
Abstract
In this paper a mechanism of inherent negative differential conductance (NDC) in the structures with tunnelling from metal into 2D channel has been proposed. The narrow 2D channel in the structures is formed by a steep narrow Schottky barriers on one side and a heterojunction on other side. The channel is partly filled with electrons and conductive due to a heavy n-doping close to the heterojunction. The nonparabolicity effects in such structures are also discussed.
Keywords
Fermi level; Schottky barriers; negative resistance; p-n heterojunctions; tunnelling; 2D channel; Fermi level; NDC; Schottky barriers; heavy n doping; heterojunction; negative differential conductance; nonparabolicity; tunnelling; Educational programs; Electrons; Gallium arsenide; Gallium nitride; Heterojunctions; Photonic band gap; Schottky barriers; Tunneling; US Government;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272079
Filename
1272079
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