Title :
Application of the EKV model to the DTMOS SOI transistor
Author :
Colinge, J.P. ; Park, J.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
DTMOS SOI transistor was simulated by using Env-Krummenacher-Vittoz (EVK) model, because its equations are valid in all regimes of operation, above or below threshold and saturation. The electrical characteristics of GBSOI MOSFET is compared with DTMOS device. The model predicts that subthreshold swing value close to the 60 mV/decade observed in the measured data. But the reduction of subthreshold swing from 80mV/decade in the GBSOI device to 60mV/decade in the DTMOS is due to the reduction of threshold voltage with increased gate bias. The simulated results are compared with measured data.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; DTMOS SOI transistor; DTMOS device; Env-Krummenacher-Vittoz model; GBSOI MOSFET; Si; electrical properties; subthreshold swing value; threshold voltage; Application software; Circuit simulation; Doping; Electron mobility; Equations; MOSFET circuits; Predictive models; Solid modeling; Threshold voltage; Transconductance;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272090
