Title :
Heteroepitaxial growth of GaN, AlN, and AlGaN layers on SiC substrates by HVPE
Author :
Melnik, Yu. ; Kovalenkov, O. ; Soukhoveev, V. ; Ivantsov, V. ; Shapovalova, Y. ; Usikov, A. ; Dmitriev, V.
Author_Institution :
TDI Inc., Silver Spring, MD, USA
Abstract :
Heteroepitaxial growth of group III nitride layers on SiC substrates by hydride vapour phase epitaxy (HVPE) is described in this paper. AlN, GaN, and AlGaN epitaxial layers were grown on 2-inch SiC substrates with a growth rate ranging from 0.2 to 1.5 ≥m/min. The reciprocal space maps for the thin and thick AlN layers grown on SiC substrates is presented. Dependence of etch pit density in AlN layers on layer thickness is illustrated. X-ray theta-omega scan for GaN/AlN/SiC heterostructure was showed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; 2 inch; AlGaN; AlGaN epitaxial layers; AlN epitaxial layers; GaN epitaxial layers; GaN-AlN-SiC; SiC substrates; etch pit density; heteroepitaxial growth; hydride vapour phase epitaxial growth; reciprocal space map; Aluminum gallium nitride; Etching; Gallium nitride; Lattices; Optical materials; Optical microscopy; Silicon carbide; Silver; Substrates; Thermal stresses;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272119
