Heteroepitaxial growth of GaN, AlN, and AlGaN layers on SiC substrates by HVPE

Author

Melnik, Yu. ; Kovalenkov, O. ; Soukhoveev, V. ; Ivantsov, V. ; Shapovalova, Y. ; Usikov, A. ; Dmitriev, V.

Author_Institution

TDI Inc., Silver Spring, MD, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

332

Lastpage

333

Abstract

Heteroepitaxial growth of group III nitride layers on SiC substrates by hydride vapour phase epitaxy (HVPE) is described in this paper. AlN, GaN, and AlGaN epitaxial layers were grown on 2-inch SiC substrates with a growth rate ranging from 0.2 to 1.5 ≥m/min. The reciprocal space maps for the thin and thick AlN layers grown on SiC substrates is presented. Dependence of etch pit density in AlN layers on layer thickness is illustrated. X-ray theta-omega scan for GaN/AlN/SiC heterostructure was showed.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; 2 inch; AlGaN; AlGaN epitaxial layers; AlN epitaxial layers; GaN epitaxial layers; GaN-AlN-SiC; SiC substrates; etch pit density; heteroepitaxial growth; hydride vapour phase epitaxial growth; reciprocal space map; Aluminum gallium nitride; Etching; Gallium nitride; Lattices; Optical materials; Optical microscopy; Silicon carbide; Silver; Substrates; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272119

Filename

1272119