Time-resolved measurements of self-heating in SOI and strained-Si MOSFETs using off-state leakage current luminescence

Author

Polonsky, Stas ; Jenkins, Keith A.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

359

Lastpage

360

Abstract

A new non-invasive optical technique is used to measure time-resolved temperature of advanced CMOS FETs. The technique uses time-resolved photon emission microscopy to measure the temperature-dependent luminescence of off-state leakage current. The method measures the temperature of the device channel, independent of surrounding materials or interconnects. The technique has been used to measure, for the first time, self-heating dynamics in SOI and strained-Si nFETs.

Keywords

MOSFET; elemental semiconductors; leakage currents; luminescence; silicon; silicon-on-insulator; CMOS FET; SOI; Si; noninvasive optical technique; off state leakage current luminescence; self-heating dynamics; silicon-on-insulator; strained Si nMOSFET; temperature dependent luminescence; time resolved photon emission microscopy; time resolved temperature measurements; Current measurement; FETs; Leakage current; Luminescence; MOSFETs; Microscopy; Optical interconnections; Optical materials; Stimulated emission; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272135

Filename

1272135