Suppression of the reverse short channel effect in sub-micron CMOS devices

Reverse Short Channel Effect (RSCE) is caused by the increased channel concentration with decreasing gate length in submicron devices. It has been reported that the source for this concentration increase is the point defect enhanced localize diffusion near the gate edge that causes boron to pile-up near oxide/silicon interface. In this work we have performed experimental studies to identify the process steps that decrease the extent of the RCSE not only in the NMOS devices but in PMOS devices as well. Various experiments were performed to understand the effects of different implant conditions and process steps variations on RCSE.