Title :
Chlorine-hydrogen ECR etching of InGaAsP/InP
Author :
Welty, R.J. ; Reinhardt, C.E. ; Han, I.Y. ; Du, Y. ; Yoo, S.J.
Author_Institution :
Center for Micro & Nano Technol., Lawrence Livermore Nat. Lab., Berkeley, CA, USA
Abstract :
Electron cyclotron resonance etching (ECR) of InP based materials using a plasma containing Cl2 and H2 is reported in this paper. The etch rates for InP and InGaAsP using Cl2/H2 plasma at 1mTorr(ECR power=850 W, RF power=250 W) are illustrated. AFM measurements are done on both the sidewall of the etched facet and the surface. The sidewall rms roughness is 3.67 nm and the surface is 1.01 nm. Fabry-Perot resonance measurements are done to determine the scattering loss of optical waveguides (w=2 μm) etched by this technique and show a low loss of 1.2 dB/cm.
Keywords :
Fabry-Perot resonators; III-V semiconductors; atomic force microscopy; cyclotron resonance; etching; gallium compounds; indium compounds; optical waveguides; surface roughness; 1.01 nm; 250 W; 3.67 nm; 850 W; AFM measurement; Fabry-Perot resonance; InGaAsP-InP; InP based materials; atomic force microscopy; chlorine-hydrogen ECR etching; electron cyclotron resonance; optical waveguides; scattering loss; sidewall rms roughness; surface roughness; Etching; Indium phosphide; Optical scattering; Optical surface waves; Plasma applications; Plasma materials processing; Plasma measurements; Resonance; Rough surfaces; Surface roughness;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272163
