Title :
Metal-molecule-semiconductor heterostructures for nanoelectronic applications
Author :
Lodha, Saurabh ; Janes, David B.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
The present work focuses on metal-molecule-semiconductor (Au-molecule-GaAs) heterostructures. Four probe I-V measurements on the Au-molecule-GaAs device was calculated at room temperature. The presence of the molecular layer lower the effective barrier height due to the relatively low dielectric constant of the molecules and in some cases, the net dipole moment of the molecules. FTIR spectra was explained for 1-octadecanethiol (ODT) monolayer on GaAs.
Keywords :
Fourier transform spectra; III-V semiconductors; gallium arsenide; gold; infrared spectra; nanoelectronics; organic compounds; permittivity; semiconductor heterojunctions; semiconductor thin films; 1-octadecanethiol monolayer; 293 to 298 K; Au-GaAs; Au-molecule-GaAs; FTIR spectra; GaAs substrate; dielectric constant; dipole moment; four probe I-V measurements; metal-molecule-semiconductor heterostructures; molecular layer; nanoelectronic applications; room temperature; Application software; Contacts; Crystallization; Gallium arsenide; Nanoscale devices; Power engineering and energy; Schottky barriers; Semiconductivity; Temperature dependence; Temperature measurement;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272177
