An analytical model of short-channel effect for sub-100 nm MOSFET with graded junction and halo doped channel

In this paper the analytical channel potential solution and short-channel effect model are derived for sub-100 nm MOSFET with graded junction and halo doped channel. The dependence of the counter-doping due to graded source/drain junction is presented for the first time. Scale-length approach for solving 2D poisson´s equation is extended to find the channel potential successfully. By this model, the lateral non-uniform channel devices can be reduced into uniform devices with shorter lengths. The effects of the halo and graded junction on short-channel MOSFET can be illustrated from the viewpoints of the distributed effective-doping concentration and the exponential roll-off behavior.