DocumentCode :
404183
Title :
A numerical study of vertical transport in arbitrary quantum well structures
Author :
Recine, Greg ; Rosen, Bernard ; Cui, Hong-Liang
Author_Institution :
Appl. Electron. Lab., Stevens Inst. of Technol., Hoboken, NJ, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
484
Abstract :
Numerical studies of transient and steady state one-dimensional transport through resonant tunneling structures (RTSs) have been widely reported. For the most part, the structures studied have been symmetric with a single well. Following the method of Buot-Jensen, we apply a lattice Weyl-Wigner 1D single band transport code to both double barrier (DBRTS) and multiple barrier (TBRTS) GaAs/AlGaAs structures which are spatial and energetically asymmetric. Both the transient and steady state behaviors are studied. We show that the current-voltage characteristics can (a) vary drastically from those obtained from the associated symmetric structure, and (b) do not follow in a smooth manner with varying asymmetries. We also show how a n-barrier system behaves when approaching a superlattice (n∼6), and discuss the feasibility of using a Bloch function approach to simulate a superlattice.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; resonant tunnelling; semiconductor quantum wells; semiconductor superlattices; Bloch function; Buot-Jensen method; GaAs-AlGaAs; GaAs/AlGaAs structures; Weyl-Wigner 1D single band transport code; arbitrary quantum well structures; double barrier; multiple barrier; n-barrier system; resonant tunneling structures; steady state one-dimensional transport; superlattice; transient one-dimensional transport; vertical transport; Current-voltage characteristics; Hysteresis; Physics; Quantum mechanics; Resonant tunneling devices; Solid state circuits; Steady-state; Superlattices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272206
Filename :
1272206
Link To Document :
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