MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses

Author

Hsu, B.-C. ; Chang, S.T. ; Kuo, P.-S. ; Chen, P.S. ; Liu, C.W. ; Lu, J.-H. ; Kuan, C.H.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

491

Lastpage

492

Abstract

A 5-period self-assembled Ge/Si quantum dots with 3 nm wetting (quantum wells) grown by UHV/CVD is fabricated into MIS tunneling diodes with low temperature (50 °C) liquid phase deposition (LPD) oxide and oxynitride. The dark current of MIS tunneling diode is dominated by thermal generation of electron-hole pairs through the defects in the depletion region and at the Si/SiO₂ interface. Using oxynitride as gate dielectric, the operating temperature reaches 140 K for 3∼10μm and is up to 200 K for 2∼3 μm detection.

Keywords

CVD coatings; Ge-Si alloys; MIS devices; dark conductivity; infrared detectors; liquid phase deposited coatings; photodetectors; self-assembly; semiconductor materials; semiconductor quantum dots; semiconductor quantum wells; 140 K; 2 to 10 micron; 3 nm; CVD; Ge-Si; LPD; MIS tunneling diodes; MOS Ge/Si quantum dot; Si/SiO₂ interface; chemical vapour deposition; depletion region; electron-hole pairs; gate dielectric; infrared photodetectors; liquid phase deposition; quantum wells; thermal generation; wetting layer response; Biomedical engineering; Dark current; Diodes; Infrared detectors; Insulation; Photodetectors; Quantum dots; Temperature; Tunneling; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272213

Filename

1272213