Title :
Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching
Author :
Huang, Wu-Ping ; Lin, Ching-Fuh
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
It is confirmed that the efficient light emits at the Si bandgap energy in the MOS tunneling diode structure. But its external quantum efficiency only about ∼10-5. We make the surface roughness in the anisotropic dissolution of Si(100) in aqueous KOH. Such surface roughness enhance phonon-assisted radiative recombination. By KOH etching, the external quantum efficiency arrived at ∼10-4.
Keywords :
MIS devices; dissolving; electroluminescence; elemental semiconductors; energy gap; etching; light emitting diodes; nanoparticles; potassium compounds; silicon; surface roughness; tunnel diodes; KOH; KOH wet etching; Si; Si bandgap energy; Si-MOS tunneling diode; anisotropic dissolution; external quantum efficiency; light-emission efficiency; phonon-assisted radiative recombination; surface roughness; Anisotropic magnetoresistance; Contacts; Diodes; Nanoparticles; Photonic band gap; Rough surfaces; Silicon; Surface roughness; Tunneling; Wet etching;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274499
