Title :
Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping
Author :
Cheng, Yung-Chen ; Lin, En-Chiang ; Feng, Shih-Wei ; Wang, Hsiang-Chen ; Yang, C.C. ; Ma, Kung-Jen ; Shi, Shih-Chen ; Chen, L.C. ; Pan, Chang-Chi ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The effects of thermal annealing on the optical properties and material structures of InGaN/GaN quantum wells with silicon doping were studied to find that the material microstructures alternation was the major reason for the changes.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; rapid thermal annealing; semiconductor quantum wells; silicon; thermo-optical effects; InGaN-GaN; InGaN-GaN quantum well structures; Si; material microstructure alternation; optical properties; silicon doping; thermal annealing; Annealing; Buffer layers; Doping; Equations; Gallium nitride; Mechanical engineering; Optical buffering; Optical materials; Silicon; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274504
