DocumentCode
405350
Title
Improved temperature characteristics of semiconductor lasers due to carrier redistribution among nonidentical multiple quantum wells
Author
Wu, Chao-Hsin ; Yu, Di-Ku ; Lin, Ching-Fuh
Author_Institution
Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
1
fYear
2003
fDate
15-19 Dec. 2003
Abstract
Carriers among nonidentical multiple quantum wells (MQWs) will redistribute as temperature varies. This is due to strongly temperature-dependent Fermi-Dirac distribution, which favors carriers in high energy states in high temperature. As a result, the temperature characteristic of semiconductor can be improved.
Keywords
energy states; fermion systems; quantum statistical mechanics; quantum well lasers; temperature distribution; MQWs; carrier redistribution; high energy states; multiple quantum wells; semiconductor lasers; temperature characteristics; temperature-dependent Fermi-Dirac distribution; Diode lasers; Photonic band gap; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1274578
Filename
1274578
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