Title :
High performance large area single-mode vertical-cavity surface-emitting lasers
Author :
Hsueh, Tao-Hung ; Kuo, Hao-Chung ; Lai, Fang-I ; Lai, Li-Hung ; Wang, S.C.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report a low Ith (∼1.5mA), high power (>5mW) and speed performance (10 Gb/s operation) single mode GaAs VCSEL employing O+ implantation, MOCVD regrowth and selective oxidation.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; optical fabrication; oxidation; surface emitting lasers; 10 Gbit/s; GaAs:O; MOCVD regrowth; O+ implantation; selective oxidation; single mode GaAs VCSEL; single-mode vertical-cavity surface-emitting lasers; Gallium arsenide; Laser modes; Lasers and electrooptics; MOCVD; Optical losses; Oxidation; Power engineering and energy; Signal analysis; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274622
