DocumentCode :
405394
Title :
Growth and characterization of 850 nm InGaAsP/InGaP strain-compensated VCSELs by MOCVD
Author :
Kuo, H.C. ; Lu, T.C. ; Chang, Y.S. ; Lai, F.Y. ; Kao, G.C. ; Laih, L.H. ; Wang, S.C.
Author_Institution :
Inst. of Electro-opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
1
fYear :
2003
fDate :
15-19 Dec. 2003
Abstract :
In this paper, we demonstrate the growth and characterization of 850 nm oxide-confined VCSELs utilizing In0.18Ga0.82P0.2/ln0.4Ga0.6P strain-compensated SC-MQWs by MOCVD. The VCSELs show very low threshold current good temperature performance, and high modulation response up to 12.5 Gb/s from 25C to 85C.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; optical modulation; surface emitting lasers; 12.5 Gbit/s; 25 to 85 C; 850 nm; InGaAsP-InGaP; InGaAsP-InGaP strain-compensated VCSEL growth; MOCVD; low threshold current good temperature performance; modulation response; oxide-confined VCSEL characterization; Apertures; Extinction ratio; Frequency modulation; Gallium arsenide; Local area networks; MOCVD; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
Type :
conf
DOI :
10.1109/CLEOPR.2003.1274626
Filename :
1274626
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=405394
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