DocumentCode
405418
Title
Coherent phonon spectroscopy of semiconductor-metal interfaces
Author
Chang, Y.-M.
Author_Institution
Center for Condensed Matter Sci., Nat. Taiwan Univ., Taiwan
Volume
1
fYear
2003
fDate
15-19 Dec. 2003
Abstract
Coherent LO and LA phonons of GaP-Au Schottky interfaces are probed with TRSHG technique. The driving mechanisms for these phonon modes are proposed. Bias-dependent carrier and phonon interaction can now be investigated in femtosecond timescale.
Keywords
III-V semiconductors; Schottky effect; gallium compounds; gold; high-speed optical techniques; optical harmonic generation; phonon-phonon interactions; spectroscopy; GaP-Au; GaP-Au Schottky interfaces; bias-dependent carrier; coherent phonon spectroscopy; femtosecond timescale; phonon interaction; phonon modes; semiconductor-metal interfaces; Brillouin scattering; Frequency; Light scattering; Phonons; Raman scattering; Semiconductor-metal interfaces; Spectroscopy; Time measurement; Ultrafast optics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1274651
Filename
1274651
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