Title :
Electrical field and stress effects on metal induced crystallization of sputtered silicon
Author :
Hsu, Ching-Ming ; Chen, Ian-Fu ; Yu, Ming-Chang
Author_Institution :
Dept. of Electr. Eng., Southern Taiwan Univ. of Technol., Tainan, Taiwan
Abstract :
The release of film stress during thermal annealing for a-silicon/aluminum/glass structures tended to deteriorate the aluminum-induced crystallization (AIC) of sputtered silicon. The external electrical field below 640 V/cm performed little effect on the crystallization enhancement.
Keywords :
aluminium; amorphous semiconductors; crystallisation; electro-optical effects; elemental semiconductors; optical films; optical glass; silicon; thermo-optical effects; a-silicon-aluminum-glass structures; aluminum-induced crystallization; crystallization enhancement; electrical field; film stress; metal induced crystallization; sputtered silicon; stress effects; thermal annealing; Aluminum; Amorphous materials; Annealing; Cities and towns; Crystallization; Semiconductor films; Silicon; Thermal engineering; Thermal stresses; X-ray scattering;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274682
