DocumentCode
405446
Title
Improvement of the high-temperature characteristics of 1.52 μm InGaAs laser with (InAlAs)0.4(InGaAs)0.6 short-period superlattice barriers
Author
Heo, D. ; Song, J.D. ; Choi, W.J. ; Lee, J.I. ; Lee, Y.T. ; Jeong, J. ; Han, I.K.
Author_Institution
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
Volume
1
fYear
2003
fDate
15-19 Dec. 2003
Abstract
A high-temperature characteristics of 1.52 μm InGaAs ridge waveguide laser diode (LD) with InGaAs/InAlAs short period superlattices (SPSs) barriers is reported. The SPSs are grown by digital-alloy molecular beam epitaxy (MBE). There have been similar studies at the 0.98 μm LD using GaAs/AlGaAs SPSs barrier (T0=300 K) and 1.3 μm InGaAsP LD using (InGaAsP)4/(InP)5 SPSs barrier (T0=90 K). On the basis of above context, It is reasonable to adapt SPSs to InGaAlAs/InGa(Al)As system. In this letter, a high-temperature characteristics of 1.52 μm InGaAs LD with (InAlAs)0.4(InGaAs)0.6 SPSs barriers grown by digital alloy MBE technique is reported for the first time.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; ridge waveguides; semiconductor lasers; 0.98 micron; 1.32 micron; 1.52 micron; 300 K; 90 K; GaAs-AlGaAs; InAlAs-InGaAs; InGaAlAs; InGaAlAs-InGaAs; InGaAs laser; InGaAs-InAlAs; InGaAsP; InGaAsP-InP; InP; digital-alloy molecular beam epitaxy; ridge waveguide laser diode; short-period superlattice barriers; Digital alloys; Indium compounds; Indium gallium arsenide; Laser theory; Microwave communication; Molecular beam epitaxial growth; Superlattices; Temperature dependence; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1274684
Filename
1274684
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