• DocumentCode
    405487
  • Title

    1.3 μm light emission from Al2O3/Si1-xGex/Si MOS tunnel diodes

  • Author

    Lin, C.Y. ; Lee, H.Y. ; Chin, Albert ; Hou, Y.T. ; Li, M.F. ; McAlister, S.P. ; Kwong, D.L.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    1
  • fYear
    2003
  • fDate
    15-19 Dec. 2003
  • Abstract
    Light emission at ∼1.3 μm was measured at room temperature in Al2O3/Si1-xGex MOS tunnel diodes on Si substrates. The merits of using Si1-xGex in MOS light-emitting devices is that they can be embedded in a CMOS process, and have good efficiency (with photon energy \n\n\t\t
  • Keywords
    MIS devices; alumina; elemental semiconductors; energy gap; germanium; light emitting diodes; photoluminescence; silicon; tunnel diodes; 1.3 micron; 293 to 298 K; Al2O3-Si1-xGex-Si MOS tunnel diodes; Al2O3-SiGe; CMOS process; MOS light-emitting devices; Si; light emission; photon energy; Diodes; Effective mass; Germanium silicon alloys; Indium tin oxide; MOSFET circuits; Quantization; Silicon germanium; Superlattices; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
  • Print_ISBN
    0-7803-7766-4
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2003.1274726
  • Filename
    1274726
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=405487