• DocumentCode
    405490
  • Title

    Enhanced PL of high density (≈4.7×1011/cm2) InAs QDs by using graded interface of GaAs/AlAs/GaAs

  • Author

    Park, S.K. ; Tatebayashi, J. ; Arakawa, Y.

  • Author_Institution
    Inst. of Ind. Sci., Tokyo Univ., Japan
  • Volume
    1
  • fYear
    2003
  • fDate
    15-19 Dec. 2003
  • Abstract
    We have achieved an enhanced PL of high density (≈4.7×1011/cm2) InAs QDs by using graded interface of GaAs/AlAs/GaAs. The graded interface applied for the purpose of improving surface state helps to obtain high intensity PL spectra of InAs QDs. With increasing the number of graded interface, the intensity of PL emitted from InAs QDs is increased. From the results, we conclude that the graded interface is a key point of fabricating devices, which have high optical properties.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical fabrication; photoluminescence; semiconductor quantum dots; GaAs-AlAs-GaAs; InAs; enhanced PL; graded interface; high density InAs QD; Gallium arsenide; Optical surface waves; Quantum dots; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
  • Print_ISBN
    0-7803-7766-4
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2003.1274730
  • Filename
    1274730
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=405490