• DocumentCode
    405539
  • Title

    Enhanced visible photoluminescence of multienergy silicon ion implanted SiO2 films

  • Author

    Yu, Kuo-Cheng ; Lin, Gong-Ru

  • Author_Institution
    Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    1
  • fYear
    2003
  • fDate
    15-19 Dec. 2003
  • Abstract
    Complete activation of irradiative defects in multirecipe Si+-implanted PECVD grown 5000 nm-thick SiO2 on Si via annealing at 1100 °C in Ar ambient for 60 min has been observed with maximum visible photoluminescence at 442 nm.
  • Keywords
    argon; elemental semiconductors; ion implantation; optical films; photoluminescence; silicon compounds; 1100 C; 442 nm; 5000 nm; 60 min; Ar; Ar ambient; SiO2; enhanced visible photoluminescence; irradiative defect; multienergy silicon ion implanted SiO2 film; Annealing; Argon; Photoluminescence; Semiconductor films; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
  • Print_ISBN
    0-7803-7766-4
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2003.1274789
  • Filename
    1274789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=405539