DocumentCode
40560
Title
Fabrication and measurement of graphene p–n junction with two top gates
Author
Jingping Liu ; Safavi-Naeini, S. ; Ban, D.
Author_Institution
Sch. of Electron. & Opt. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
Volume
50
Issue
23
fYear
2014
fDate
11 6 2014
Firstpage
1724
Lastpage
1726
Abstract
A graphene device with two top gates has been fabricated and measured for the first time. The thickness of the gate dielectric is 60 nm. The measurement results indicate that the externally applied gate biases can dope the underneath graphene to either p- or n-type, forming an induced p-n junction. The current-voltage (I-V) curve measurement results also indicate that there is no nonlinear phenomenon in a weakly induced graphene p-n junction. This graphene p-n junction can potentially be used for terahertz wave generation.
Keywords
graphene; p-n junctions; terahertz wave generation; C; current-voltage curve measurement; gate dielectric thickness; graphene device; graphene p-n junction; size 60 nm; terahertz wave generation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.3061
Filename
6955159
Link To Document