• DocumentCode
    405603
  • Title

    Dielectric reliability and material properties of Al2O3 in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO2, SiN and Ta2O5

  • Author

    Allers, K.-H. ; Brenner, P. ; Schrenk, M.

  • Author_Institution
    Corporate Logic, Reliability Dept., Infineon Technol. AG, Munich, Germany
  • fYear
    2003
  • fDate
    28-30 Sept. 2003
  • Firstpage
    35
  • Lastpage
    38
  • Abstract
    The intrinsic dielectric properties of Al2O3 have been investigated with respect to MIMCAP applications and compared to SiO2, SiN and Ta2O5. Al2O3 may be scaled down to 20nm (3.5fF/μm2) while still meeting the reliability requirements and thus surpassing SiN and SiO2 considerably. C(V) dependence (about 100ppm/V2 @ 50nm for the quadratic voltage coefficient) and dielectric loss (tanδ=0.0024) meet the requirements for analog and RF applications. Compared to Ta2O5, Al2O3 has much lower leakage, but a slight disadvantage in achievable specific capacitance.
  • Keywords
    MIM devices; aluminium compounds; capacitors; dielectric properties; semiconductor device reliability; semiconductor device testing; silicon compounds; tantalum compounds; Al2O3; MIMCAP; RF application; RF bipolar technologies; SiN; SiO2; Ta2O5; analog application; dielectric loss; dielectric properties; dielectric reliability; material properties; metal insulator metal capacitors; Aluminum compounds; Capacitors; MIM devices; Semiconductor device reliability; Semiconductor device testing; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7800-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2003.1274930
  • Filename
    1274930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=405603