An accurate method to determine the substrate network elements and base resistance

Author

Basaran, Umut ; Berroth, Manfred

Author_Institution

Inst. of Electr. & Opt. Commun. Eng., Stuttgart Univ., Germany

fYear

2003

fDate

28-30 Sept. 2003

Firstpage

93

Lastpage

96

Abstract

An accurate and robust method to determine the substrate network elements and base resistance of bipolar transistors from S-parameter measurements is proposed in this work. The investigated substrate network is compatible with up-to-date large-signal models like HICUM and includes the substrate-collector depletion capacitance, substrate resistance and capacitance. As an improvement upon the impedance circle method, the base resistance extraction method introduced in this work takes into account not only the extrinsic base-collector, but also the extrinsic base-emitter capacitance.

Keywords

S-parameters; bipolar transistors; semiconductor device measurement; semiconductor device models; HICUM; S-parameter measurements; base resistance extraction; base-collector capacitance; base-emitter capacitance; bipolar transistors; impedance circle method; large-signal models; substrate network elements; substrate resistance; substrate-collector depletion capacitance; Bipolar transistors; Scattering parameters; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the

ISSN

1088-9299

Print_ISBN

0-7803-7800-8

Type

conf

DOI

10.1109/BIPOL.2003.1274942

Filename

1274942