DocumentCode :
405609
Title :
Impact of collector-base junction traps and high injection barrier effect on 1/f noise
Author :
Tang, Jin ; Niu, Guofu ; Joseph, Alvin J. ; Harame, David L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
fYear :
2003
fDate :
28-30 Sept. 2003
Firstpage :
175
Lastpage :
178
Abstract :
This work investigates the impact of CB junction traps and high injection barrier effect on 1/f noise in SiGe HBTs. By comparing the 1/f noise of standard and high breakdown voltage HBTs, we show that the collector-base junction traps result in not only a higher IB, but also higher base current 1/f noise at high injection. The base current 1/f noise level remains proportional to IB2.
Keywords :
1/f noise; electric noise measurement; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device testing; semiconductor heterojunctions; 1/f noise; CB junction traps; HBT; SiGe; base current; breakdown voltage; collector-base junction traps; heterojunction bipolar transistor; high injection barrier effect; Heterojunction bipolar transistors; Noise measurement; Random noise; Semiconductor device testing; Semiconductor heterojunctions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN :
1088-9299
Print_ISBN :
0-7803-7800-8
Type :
conf
DOI :
10.1109/BIPOL.2003.1274961
Filename :
1274961
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=405609
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