Title :
BiCMOS7RF: a highly-manufacturable 0.25-μm BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy
Author :
Baudry, H. ; Szelag, B. ; Deléglise, F. ; Laurens, M. ; Mourier, J. ; Saguin, F. ; Troillard, G. ; Chantre, A. ; Monroy, A.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper describes ST new BiCMOS RF technology based on a mature 0.25μm CMOS process. Two SiGe:C HBTs are implemented for low and high voltage applications. Very low noise figure of 0.4dB at 2GHz is achieved. Other devices like isolated vertical PNP BJT, NLDEMOS and advanced passives are integrated in this technology to address RF circuit needs.
Keywords :
BiCMOS integrated circuits; carbon; epitaxial growth; heterojunction bipolar transistors; integrated circuit manufacture; radiofrequency integrated circuits; silicon compounds; 0.25 micron; 0.4 dB; 2 GHz; BiCMOS RF-applications-dedicated technology; BiCMOS7RF; HBT; NLDEMOS; SiGe:C; advanced passive devices; bipolar junction transistor; heterojunction bipolar transistor; isolated vertical PNP BJT; noise figure; nonselective epitaxy; BiCMOS integrated circuits; Carbon; Epitaxial growth; Heterojunction bipolar transistors; Integrated circuit manufacture; Silicon compounds;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274967
