Title :
Observation of coherent interfacial optical phonons in III-V semiconductor nanostructures
Author :
Chang, Y.-M. ; Chang, N.-A. ; Lin, H.H. ; Chia, C.-T. ; Chen, Y.F.
Author_Institution :
Center for Condensed Matter Sci., Nat. Taiwan Univ., Taiwan
Abstract :
We report the coherent phonon spectroscopy of InGaP-GaAs-InGaP SQWs, in which a localized interfacial optical phonon is identified. The GaAs-InGaP heterointerface quality can be characterized by measuring the dephasing time of this interfacial phonon mode.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nanostructured materials; phonon spectra; phonon-defect interactions; phonon-phonon interactions; semiconductor heterojunctions; semiconductor quantum wells; III-V semiconductors; InGaP-GaAs; coherent interfacial optical phonons; coherent phonon spectroscopy; dephasing time; heterointerface; interfacial phonon mode; nanostructures; Gallium arsenide; III-V semiconductor materials; Optical buffering; Optical pumping; Optical scattering; Phonons; Raman scattering; Semiconductor nanostructures; Spectroscopy; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277030
