DocumentCode :
405680
Title :
Surface treatment of inductively coupled plasma on p-GaN
Author :
Tseng, C.T. ; Su, S.H. ; Yokoyama, M. ; Chen, S.M.
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
Volume :
2
fYear :
2003
fDate :
15-19 Dec. 2003
Abstract :
A reduction of Ni/Au ohmic contact on p-type GaN is obtained by surface treatment using Cl2 inductively coupled plasma (ICP).
Keywords :
III-V semiconductors; gallium compounds; gold; nickel; ohmic contacts; plasma materials processing; reduction (chemical); surface treatment; wide band gap semiconductors; Cl2; Cl2 inductively coupled plasma; Ni-Au-GaN; Ni/Au ohmic contact; inductively coupled plasma; p-type GaN; surface treatment; Conductivity; Contact resistance; Electrical resistance measurement; Etching; Gallium nitride; Nitrogen; Ohmic contacts; Plasma applications; Surface resistance; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
Type :
conf
DOI :
10.1109/CLEOPR.2003.1277099
Filename :
1277099
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=405680
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