• DocumentCode
    405680
  • Title

    Surface treatment of inductively coupled plasma on p-GaN

  • Author

    Tseng, C.T. ; Su, S.H. ; Yokoyama, M. ; Chen, S.M.

  • Author_Institution
    Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
  • Volume
    2
  • fYear
    2003
  • fDate
    15-19 Dec. 2003
  • Abstract
    A reduction of Ni/Au ohmic contact on p-type GaN is obtained by surface treatment using Cl2 inductively coupled plasma (ICP).
  • Keywords
    III-V semiconductors; gallium compounds; gold; nickel; ohmic contacts; plasma materials processing; reduction (chemical); surface treatment; wide band gap semiconductors; Cl2; Cl2 inductively coupled plasma; Ni-Au-GaN; Ni/Au ohmic contact; inductively coupled plasma; p-type GaN; surface treatment; Conductivity; Contact resistance; Electrical resistance measurement; Etching; Gallium nitride; Nitrogen; Ohmic contacts; Plasma applications; Surface resistance; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
  • Print_ISBN
    0-7803-7766-4
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2003.1277099
  • Filename
    1277099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=405680