DocumentCode
405729
Title
Modeling of multi-level inductor fabricated on silicon substrate
Author
Yong-Zhong Xiong ; Rustagi, Subhash C.
Author_Institution
Inst. of Microelectron., Singapore, Singapore
Volume
2
fYear
2003
fDate
21-24 Oct. 2003
Firstpage
1090
Abstract
A novel conceptual physical model is proposed for multilevel spiral inductors on silicon substrate where in the metal layers are connected in parallel through dense vias. The model takes into consideration the mutual inductance, and the inter-metal capacitance between different metal spirals. An excellent agreement between the simulated S-parameter from the extracted model and measured data is obtained. It is useful for optimization of multi metal inductor design.
Keywords
S-parameters; circuit optimisation; inductors; semiconductor device models; silicon; substrates; S-parameter; conceptual physical model; design optimization; extracted model; inter-metal capacitance; metal layers; metal spirals; multilevel inductor; multilevel spiral inductors; multimetal inductor design; mutual inductance; silicon substrate;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2003. Proceedings. 5th International Conference on
ISSN
1523-553X
Print_ISBN
0-7803-7889-X
Type
conf
DOI
10.1109/ICASIC.2003.1277402
Filename
1277402
Link To Document