DocumentCode
405837
Title
Circuit technologies for an embedded 3.3 V 2 Mb low power SIBE flash memory
Author
Liyang Pan ; Zhigang Duan ; Dong Wu ; Jun Zhu ; Ying Zeng
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
1
fYear
2003
fDate
21-24 Oct. 2003
Firstpage
478
Abstract
In this paper, an embedded 3.3 V 2 Mb SIBE-based flash memory is introduced. Some novel circuit technologies, such as the DINOR memory array architecture, the row decoder with high performance negative voltage switch and the sector decoder, are described in detail. By introducing a negative logic level circuit in the sector decoder, the maximum high voltage stress is reduced to 8 V. The simulated and tested results show that the SIBE-based Flash memory has low program power, high access speed and high performance.
Keywords
NOR circuits; decoding; flash memories; integrated circuit technology; 2 Mbyte; 3.3 V; 8 V; DINOR memory array architecture; SIBE flash memory; circuit technologies; divided bit line NOR memory array architecture; embedded flash memory; negative logic level circuit; negative voltage switch; row decoder; sector decoder; source induced band-to-band hot electron injection;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2003. Proceedings. 5th International Conference on
ISSN
1523-553X
Print_ISBN
0-7803-7889-X
Type
conf
DOI
10.1109/ICASIC.2003.1277590
Filename
1277590
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