Title :
Evaluation of SiC GTOs for pulse power switching
Author :
Bayne, S.B. ; Ibitayo, D.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
Certain applications require devices that can switch high peak current with fast rise times and narrow pulse width. This work was done as an initial study to investigate the performance of Silicon Carbide (SiC) Gate turn-off thyristor (GTO) in these applications. The SiC GTOs were designed for high turn-off gain and not optimized for pulse applications. The GTOs were tested as discharge switches in a low inductance circuit delivering 2/spl mu/s pulses with a maximum switching current of 1.4 kA (94.6 kA/cm/sup 2/) and a current rise time of 2.4 kA//spl mu/s. All the devices were switched until failure. The failure modes will be discussed.
Keywords :
inductance; power semiconductor switches; pulsed power supplies; pulsed power switches; thyristors; wide band gap semiconductors; 1.4 kA; SiC GTO; discharge switches; fast rise time; low inductance circuit; narrow pulse width; peak current; pulse power switching; silicon carbide gate turn-off thyristor; switching current; Anodes; Circuit testing; Inductance; Power semiconductor switches; RLC circuits; Silicon carbide; Switching circuits; Temperature; Thyristors; Voltage;
Conference_Titel :
Pulsed Power Conference, 2003. Digest of Technical Papers. PPC-2003. 14th IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-7915-2
DOI :
10.1109/PPC.2003.1277677
