Title :
Frequency dependence of the second derivative of the currant-voltage characteristic of the heterostructure SnO2-Si at the gas adsorption [currant read as current]
Author :
Il´chenko, V.V. ; Kravchenko, Alex L. ; Telega, Vladymyr V. ; Chehun, Valery P. ; Gaskov, Alex M. ; Grinchenko, Vyktor T.
Author_Institution :
Dept. of Radiophys., Kiev Univ., Ukraine
Abstract :
The opportunity of use nanostructural heterostructure n-SnO2(Ni)/p-Si as a gas sensitivity element is investigated. The second derivative of the current-voltage characteristic of the heterostructure under influence of changes of gas environment and temperature were studied.
Keywords :
gas sensors; nanostructured materials; semiconductor thin films; silicon; tin compounds; SnO2-Si; current-voltage characteristic derivative; frequency dependence; gas adsorption; gas environment; gas sensitivity element; heterostructure SnO2-Si; nanostructual heterostructure; Current measurement; Frequency dependence; Frequency measurement; Frequency modulation; Semiconductor diodes; Semiconductor thin films; Sensor phenomena and characterization; Signal analysis; Sputtering; Voltage;
Conference_Titel :
Sensors, 2003. Proceedings of IEEE
Print_ISBN :
0-7803-8133-5
DOI :
10.1109/ICSENS.2003.1278914
