Title :
Total Ionizing Dose Effects on Silicon Ring Resonators
Author :
Bhandaru, S. ; Hu, S. ; Fleetwood, D.M. ; Weiss, S.M.
Author_Institution :
Interdiscipl. Grad. Program in Mater. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
The performance of silicon ring resonators exposed to 10-keV X-ray and 662-keV gamma radiation is reported. Unpassivated rings having no native oxide exhibit a blue-shift in resonance wavelength with increasing total dose, which is attributed to surface oxidation that is accelerated in the presence of high energy radiation. Unpassivated rings exposed to 145 krad(SiO2) of 10-keV X-rays or gamma rays exhibit blue-shifts significantly larger than the full-width at half-maximum of the resonance, leading to a more than 10 dB change in transmission. No changes in the transmission of passivated rings were observed upon irradiation. Therefore, passivated rings can function as radiation-tolerant elements in optoelectronic circuitry.
Keywords :
X-rays; gamma-rays; optoelectronic devices; oxidation; resonators; silicon; spectral line shift; X-ray; blue-shift; electron volt energy 10 keV; electron volt energy 662 keV; gamma radiation; high energy radiation; irradiation; optoelectronic circuitry; radiation-tolerant element; resonance wavelength; silicon ring resonator; surface oxidation; total ionizing dose effect; unpassivated ring; Optical ring resonators; Optical surface waves; Oxidation; Radiation effects; Silicon; Temperature measurement; Wavelength measurement; High energy radiation; ring resonator; silicon; surface passivation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2387772
