DocumentCode
406214
Title
The chaotic characteristics of transistor noise at low frequency
Author
Kai, HE ; Shu-xun, Wang
Author_Institution
Sch. of Commun. Eng., Jilin Univ., Changchun, China
Volume
1
fYear
2003
fDate
14-17 Dec. 2003
Firstpage
620
Abstract
For a long time, people have described the transistor noise at low frequency with the theory of random process. In this paper, based on reconstructing phase space of the transistor EN noise time series, the nonlinear dynamic parameters are studied. The results of our study demonstrated that the transistor EN noise at low frequency has a limited fractional dimension, besides that, the largest Lyapunov exponent of the transistor EN noise is positive, so we can draw the conclusion that the transistor EN noise at low frequency has some chaotic characteristics.
Keywords
Lyapunov methods; chaos; random processes; semiconductor device noise; time series; transistors; Lyapunov exponent; chaotic characteristics; noise time series; nonlinear dynamic parameters; random process; transistor noise; Bandwidth; Battery charge measurement; Chaos; Frequency estimation; Frequency measurement; Gain measurement; Low-frequency noise; Noise level; Noise measurement; Signal processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Neural Networks and Signal Processing, 2003. Proceedings of the 2003 International Conference on
Conference_Location
Nanjing
Print_ISBN
0-7803-7702-8
Type
conf
DOI
10.1109/ICNNSP.2003.1279351
Filename
1279351
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