Title :
Transistor Laser With 13.5-Gb/s Error-Free Data Transmission
Author :
Fei Tan ; Bambery, R. ; Feng, Ming ; Holonyak, Nick
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Champaign, IL, USA
Abstract :
A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20°C is determined to be ITH = 36 mA at VCE = 1.5 V from measured transistor laser collector current-voltage (IC-VCE) and optical power-voltage (L-VCE) characteristics. The transistor laser is measured to have a modulation bandwidth f-3dB = 8.1 GHz for IB = 75 mA (IB/ITH ~ 2) with a carrier-photon resonance amplitude (~4.2 dB). At the same bias conditions, the transistor laser demonstrates error-free 13.5-Gb/s data transmission at room temperature.
Keywords :
laser cavity resonators; optical communication equipment; optical fabrication; optical modulation; quantum well lasers; bit rate 13.5 Gbit/s; carrier-photon resonance amplitude; cavity length; current 36 mA; current 75 mA; error-free data transmission; modulation bandwidth; optical power-voltage characteristics; quantum well transistor laser; temperature 20 degC; temperature 293 K to 298 K; threshold current; transistor laser collector current-voltage characteristics; voltage 1.5 V; Adaptive optics; High-speed optical techniques; Masers; Measurement by laser beam; Optical fibers; Transistors; Transistor laser; bit error ratio; error-free data transmission;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2328666
